Fabrication of gallium arsenide MOS devices

Details Fabrication of gallium arsenide MOS devices Fabrication of gallium arsenide MOS devices

1977-06-28

1979-03-20

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29584, 204164, 204192C, B01J 1700

Patent

active

041446348

ABSTRACT:
A method of fabricating gallium arsenide MOS devices with improved stoichiometric and electrical properties is disclosed. The device includes a gallium arsenide substrate overlaid with a native oxide and an aluminum oxide layer. The device is fabricated using a plasma oxidizing process.

REFERENCES:
patent: 4062747 (1977-12-01), Chang
Electronics Letters, vol. 13, No. 2, Jan. 20, 1977, "Stable Charge Storage of M.A.O.S. etc.," by Bayraktaroglu et al., pp. 45 & 46.

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