Fabrication of gallium arsenide-germanium heteroface junction de

Details Fabrication of gallium arsenide-germanium heteroface junction de Fabrication of gallium arsenide-germanium heteroface junction de

1982-10-26

1983-08-23

Roy, Upendra

Metal treatment

Compositions

Heat treating

29572, 136249, 136262, 148175, 148171, 357 30, 357 91, 357 61, H01L 21263, H01L 21208, H01L 21225, H01L 3106

Patent

active

044002211

ABSTRACT:
Doping with one of the group Ia elements Li, Na or K near the heteroface junction produced P+ conductivity in the gallium arsenide and N+ conductivity in the germanium. The device can be used, for example, as a dual bandgap solar cell. The fabrication includes implanting the group Ia dopant in a Ge wafer. This dopant diffuses into the GaAs when it is subsequently deposited on the Ge.

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Dupuis et al., Conf. Record, 14th IEEE Photovoltaic Specialists Conf., San Diego, Calif. May 1980, p. 1388.
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Burmeister et al., Trans, Met. AIME 245 (1969) 565.
Ladd et al., Met. Trans. AIME I (1970) 609.

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