Fishing – trapping – and vermin destroying
Patent
1988-12-28
1991-08-20
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
148DIG72, 357 16, 437 39, 437 40, 437133, 437176, 437912, H01L 2170
Patent
active
050413937
ABSTRACT:
A process for manufacturing selectively doped heterostructure field-effect transistors (SDHTs), a desired wafer structure for SDHT fabrication and a method for isolating SDHTs on the wafer are disclosed herein. The wafer has epitaxial layers grown on a substrate. The layers are: a buffer layer of GaAs, a first spacer layer of AlGaAs, a donor layer of AlGaAs, a second spacer layer of AlGaAs, a first cap layer of GaAs, an etch-stop layer of AlGaAs and a second cap layer of GaAs. A protective layer of AlGaAs may then be grown on the second cap layer to protect the second cap layer from contamination or damage. Also a superlattice may first be grown on the substrate.
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Ahrens Richard E.
Baca Albert G.
Burton Randolph H.
Iannuzzi Michael P.
Lahav Alex
AT&T Bell Laboratories
Bunch William
Chaudhuri Olik
McLellan S. W.
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