Fabrication of FETs

Details Fabrication of FETs Fabrication of FETs

1983-04-29

1985-05-07

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29591, 148187, H01L 21265

Patent

active

045148937

ABSTRACT:
A method of fabricating field effect transistors which includes control of threshold potential by an ion implantation limited to the active channel area. The active channel area is defined by a photoresist pattern. Ions are implanted into the exposed area in a concentration to achieve a desired threshold. Appropriate metals are deposited over the channel area to form a gate electrode. The photoresist is lifted off leaving the gate electrode in position over the channel area. If desired, a layer of polysilicon can be included prior to resist formation and later removed by an etchant which does not attack the gate electrode.

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