Fabrication of electroluminescent semiconductor device utilizing

Details Fabrication of electroluminescent semiconductor device utilizing Fabrication of electroluminescent semiconductor device utilizing

1980-04-18

1982-07-27

Rutledge, L. Dewayne

Metal working

Method of mechanical manufacture

Assembling or joining

29569L, 29578, 148175, 156644, 156649, 156653, 156657, 357 55, 357 56, 357 60, H01L 21308, H01L 2120

Patent

active

043410103

ABSTRACT:
An electroluminescent semiconductor device such as a semiconductor laser has epitaxial monocrystalline layers (3 to 6), including an active layer (4), grown on a substrate (2). The epitaxial layers are etched in the presence of an etching mask (8) to form nonplanar mirror surfaces (9) which in the longitudinal direction bound active regions (10). To form flat and parallel mirrors (12) an epitaxial monocrystalline protective layer (11) is grown from the gaseous phase on the mirror surfaces after etching. The etching can be carried out in two stages using different etchants. With the first etchant the etched layers taken on a swallow-tail profile and then with the second etchant they take on a concave profile.

REFERENCES:
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patent: 4178564 (1979-12-01), Ladany et al.
patent: 4230997 (1980-10-01), Hartman et al.
Itoh et al., "Embedded-Stripe . . . Laser . . . Etched Mirrors", IEEE J. Quantum Electronics, vol. QE 13, No. 8, Aug, 1977, pp. 628-631.

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