Fabrication of drilled and diffused junction field-effect transi

Details Fabrication of drilled and diffused junction field-effect transi Fabrication of drilled and diffused junction field-effect transi

1984-03-23

1986-05-20

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29580, 148187, 148188, 148189, 357 20, 357 22, H01L 2138, H01L 21465

Patent

active

045891907

ABSTRACT:
A method for fabricating junction field-effect transistors includes forming in an N-type silicon substrate a plurality of high-aspect-ratio bores interposed between a source region and a drain region in the substrate, diffusing P-type impurities a predetermined distance into the substrate from the inner surface to each bore to form a concentric, P-type gate zone around each bore, forming electrical contacts to the source and drain regions and to the gate zones and forming a P-type isolation zone surrounding the source and drain regions and the gate zones. The bores, which are preferably formed by laser drilling, extend completely or partially through the thickness of the substrate. The gate zones extend, either completely through the thickness of the substrate or from the top surface of the substrate to a layer-like P-type zone formed adjacent to the bottom surface thereof. The method provides a junction field-effect transistor structure in which the conducting channel extends through nearly the entire thickness of the substrate and, therefore, results generally in a more compact device.

REFERENCES:
patent: 3007119 (1961-10-01), Barditch
patent: 3969745 (1976-07-01), Blocker
patent: 4137100 (1979-01-01), Zaleckas
patent: 4327475 (1982-05-01), Asai et al.
patent: 4463366 (1984-07-01), Ishii et al.
patent: 4482907 (1984-11-01), Jay
"Forming Electrical Interconnections Through Semiconductor Wafers", by T. R. Anthony, J. Appl. Physics, 52(8), Aug. 1981, pp. 5340-5349.
"Forming Feedthroughs in Laser-Drilled Holes in Semiconductor Wafers by Double-Sided Sputtering", by T. R. Anthony, IEEE Trans., CHMT-5(1), Mar. 1982, pp. 172-180.
"Diodes Formed by Laser Drilling and Diffusion", by T. R. Anthony, J. Appl. Phys., 53(12), Dec. 1982, pp. 9154-9164.

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