Fabrication of dielectrically isolated integrated circuit device

Details Fabrication of dielectrically isolated integrated circuit device Fabrication of dielectrically isolated integrated circuit device

1988-08-19

1990-10-02

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 89, 437 90, H01L 21265

Patent

active

049607170

ABSTRACT:
A novel method of employing selective epitaxial growth, in which interdevice isolation is intrinsically formed. Problems stemming from formation of all active device elements within selective epitaxial growth regions are addressed. Additionally, there is shown a novel transistor array formed according to the method of the invention.

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patent: 4789643 (1988-12-01), Kajikawa
Dumke, IBM Tech. Disc. Bull., vol. 22, No. 7 (Dec., 1979), pp. 2946-2947.
IBM Technical Disclosure Bulletin, vol. 22, No. 7, Dec., 1979, pp. 2749-2750, "Self-Aligned Recessed Oxide Isolation Process/Structure to Minimize Bird's Beak Formation".
Japanese Patent Abstract, vol. 8, No. 119 (E-248)(1556), Jun. 5, 1984; JP-A-59 33846, JP-A-59 33847.

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