Fabrication of dielectrically isolated devices with buried condu

Details Fabrication of dielectrically isolated devices with buried condu Fabrication of dielectrically isolated devices with buried condu

1987-11-23

1989-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 63, 437164, H01L 21225

Patent

active

048351130

ABSTRACT:
In dielectrically isolated devices a buried conducting layer adjacent to the dielectric layer is produced by a drift effect. In particular, if arsenic antimony and/or phosphorus is present in the silicon dioxide layer, it is caused to drift from this layer and enter the adjacent isolated silicon region while maintaining a relatively narrow spatial configuration. Thus, a discrete buried highly conductive layer is formed. This configuration is particularly useful for transistor configurations such as utilized in switching applications.

REFERENCES:
McCaldin, J. Vac. Sci. Technol., vol. 11, No. 6, (Nov./Dec. 1974), pp. 990-995.
Celler, J. Crystal Growth, 63 (1983), pp. 429-444.
Singh et al., J. Electrochem. Soc.: Solid State Science and Technology, vol. 131, No. 11 (Nov. 1984), pp. 2645-2651.

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