Metal treatment – Compositions – Heat treating
Patent
1985-09-27
1987-06-30
Roy, Upendra
Metal treatment
Compositions
Heat treating
29571, 29576B, 148175, 148187, 148DIG82, 148DIG83, H01L 21265, H01L 2120
Patent
active
046768416
ABSTRACT:
Dielectrically isolated devices are produced by a series of steps including the implantation of a silicon substrate to produce a precursor to the silicon oxide region and subsequently heat treating this region. In contrast to previous techniques, the extent of such heating is substantially increased to remove a non-oxidic intermediary region typically remaining.
REFERENCES:
patent: 4317686 (1982-03-01), Anand et al.
patent: 4412868 (1983-11-01), Brown et al.
patent: 4461670 (1984-07-01), Celler et al.
patent: 4490182 (1984-12-01), Scovell
Hemment et al., Vacuum, vol. 34 (Jan. 1984) 203.
Maeyama et al., Jap. Jour. Appl. Physics, 21 (1982) 744.
Jager et al., Thin Solid Films, 123 (1985) 159.
Hemment et al., Thin Solid Films, 128 (Jun. 1985) 125.
Hemment et al., in Ion Implantation & Ion Beam Processing of Materials, ed. Hubler et al., 1983, North-Holland, N.Y. p. 281.
Lam in Energy Beam--Thermal Processing, ed. Fan et al., North-Holland, 1983, N.Y., p. 579.
Pinizzotto in Ion Impl . . . -of Materials, ed. Hubler et al., North-Holland, N.Y. 1983, p. 265.
Gill et al., Ibid, 1983, p. 275.
Feldman et al., Phys. Rev. Letts. 41, 1978, 1396.
American Telephone and Telegraph Company AT&T Bell Laboratories
Roy Upendra
Schneider Bruce S.
LandOfFree
Fabrication of dielectrically isolated devices utilizing buried does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of dielectrically isolated devices utilizing buried , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of dielectrically isolated devices utilizing buried will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-446026