Fabrication of device electrodes in gan and related materials

Details Fabrication of device electrodes in gan and related materials Fabrication of device electrodes in gan and related materials

1997-10-02

2000-08-15

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438507, 438718, H01L 2120

Patent

active

061035432

ABSTRACT:
A base layer of electode made of at least a metal selected from V, Nb, and Zr, or an alloy containing such metal on an n-type GaN compound semiconductor layer. Further, a main electrode layer made of other metal is formed on the base layer. Then, an n electrode is formed by subjecting the semiconductor layer, the base layer, and the main electrode layer to a heat treatment.

REFERENCES:
patent: 5272108 (1993-12-01), Kozawa
Patent Abstracts of Japan, vol. 015, No. 304 (E-1096) Aug. 1991 re JP-A 03-108779.
Patent Abstracts of Japan, vol. 016, No. 196 (E-1200) May 1992 re JP-A 04-029378.
Z. Fan et al., "Very Low Resistance Multilayer Ohmic Contact to n-GaN," Applied Physics Letters, vol. 68, No. 12, Mar. 18, 1996, pp. 1672-1674.
M.E. Lin et al., "Low Resistance Ohmic Contacts on Wide Band-Gap GaN," Applied Physics Letters, vol. 64, No. 8, Feb. 21, 1994, pp. 1003-1005.

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