Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2007-10-16
2007-10-16
Kunemund, Robert (Department: 1722)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C427S226000, C427S387000, C427S407200, C427S409000, C257S072000, C257S627000, C257S347000, C423S342000, C423S347000
Reexamination Certificate
active
10851038
ABSTRACT:
A method of forming crystalline or polycrystalline layers includes providing a substrate and a patterning over the substrate. The method also includes providing nucleation material and forming the crystalline layer over the nucleation material. The crystalline material disposed over the substrate may be monocrystalline or polycrystalline.
REFERENCES:
patent: 5147826 (1992-09-01), Liu et al.
patent: 5352485 (1994-10-01), DeGuire et al.
patent: 5523587 (1996-06-01), Kwo
patent: 5751018 (1998-05-01), Alivisatos et al.
patent: 5879970 (1999-03-01), Shiota et al.
patent: 5940693 (1999-08-01), Maekawa
patent: 6225197 (2001-05-01), Maekawa
patent: 6241817 (2001-06-01), Jang et al.
patent: 6432757 (2002-08-01), Noguchi et al.
patent: 6448118 (2002-09-01), Yamazaki et al.
patent: 6464780 (2002-10-01), Mantl et al.
patent: 6586116 (2003-07-01), Bian et al.
patent: 6900115 (2005-05-01), Todd
patent: 7071022 (2006-07-01), Couillard et al.
patent: 2001/0012567 (2001-08-01), Saitoh et al.
patent: 2002/0168868 (2002-11-01), Todd
patent: 2005/0012099 (2005-01-01), Couillard et al.
patent: 0 598 361 (1994-05-01), None
patent: 0 651 431 (1995-05-01), None
patent: 1 119 053 (2001-07-01), None
patent: WO 03/057949 (2003-07-01), None
Mayer, James and Lau, S.S., Electronic Materials Science: For Integrated Circuits in Si and GaAs, 1990, Macmillian Publishing, 1st edition, p. 66.
Niesen, et al.; “Chemical liquid deposition of gallium nitride thin films on siloxane-anchored self-assembled monolayers”; Materials Chemistry and Physics 73 (2002) pp. 301-305.
E. Burch et al., “Template-assisted electrochemical deposition of ultrathin films of cadmium sulphide”, Thin Solid Films, vol. 305, 1997, pp. 95-102.
D. Ji et al., “Improved protein crystallization by vapor diffusion from drops in contact with transparent, self-assembled monolayers on gold-coated glass coverslips”, Journal of Crystal Growth, vol. 218, 2000, pp. 390-398.
J. Aizenberg et al., “Control of crystal nucleation by patterned self-assembled monolayers”, Nature, vol. 398, Apr. 1999, pp. 495-498.
R. Staub et al., “Scanning tunnelling microscope investigations of organic heterostructures prepared by a combination of self-assembly and molecular beam epitaxy”, Surface Science, vol. 445, 2000, pp. 368-379.
J. Flath et al., “Nucleation and growth of semiconductor particles on self-assembled monolayers by chemical solution deposition”, Thin Film Solids, vols. 327-329, 1998, pp. 506-509.
H. Lin et al., “Preparation of TiO2 films on self-assembled monolayers by sol-gel method”, Thin Solid Films, vol. 315, 1998, pp. 111-117.
D.G. Ast et al., “Kinetics of silicide-induced crystallization of polycrystalline thin-film transistors fabricated from amorphous chemical-vapor deposition silicon”, Applied Physics Letters, vol. 72, No. 7, Feb. 16, 1998, pp. 803-805.
Agarwal et al., “Synthesis of ZrO2 and Y2O3-Doped ZrO2 thin films using self-assembled monolayers”, Journal of the American Ceramic Society, vol. 80, No. 12, 1997, pp. 2967-2981.
N.D. Zakharov et al., “Structure and optical properties of Ge/Si superlattice grown at Si substrate by MBE at different temperatures”, Materials Science and Engineering B87, 2001, pp. 92-95.
“Curvature changing or flattening of anodically bonded silicon and borosilicate glass”, Harz, et al Sensors and Actuators A 55 (1996) 201-209.
Couillard James G.
Gadkaree Kishor P.
Shi Youchun
Corning Incorporated
Kunemund Robert
Nicastri Christopher
Rao G. Nagesh
Tucker William J.
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