Fabrication of contact hole using an etch barrier layer

Details Fabrication of contact hole using an etch barrier layer Fabrication of contact hole using an etch barrier layer

1990-05-30

1991-11-05

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437913, 437982, 437228, 437241, 156653, H01L 21441, H01L 21465

Patent

active

050631764

ABSTRACT:
A method of forming a contact hole in a semiconductor device while maintaining intended electrical isolation of electrical conductive material layers, even in the presence of mask misalignment/excessive etching which may occur during the fabrication process of the contact hole and the resulting device are disclosed. The method comprises the formation of an etch barrier layer to provide an isotropic etching barrier and an electrically insulating layer for the conductive material layers which are positioned proximate the contact hole. Thus, when the contact hole is formed by anisotropically etching to expose the surface of the diffusion region an electrical short cannot occur between conductive material layers proximate the contact hole and conductive material which is deposited into the contact hole.

REFERENCES:
patent: 4299862 (1981-11-01), Donley
patent: 4560436 (1985-12-01), Bukhman et al.
patent: 4620361 (1986-11-01), Matsukawa et al.
patent: 4686000 (1987-08-01), Heath
patent: 4824767 (1989-04-01), Chambers et al.

Affiliated with

Also associated with

Rating

Fabrication of contact hole using an etch barrier layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of contact hole using an etch barrier layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of contact hole using an etch barrier layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-499029