Fabrication of cleaved semiconductor lasers

Chemistry: electrical and wave energy – Processes and products – Electrostatic field or electrical discharge

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20412955, 20412975, C25F 312

Patent

active

046891250

ABSTRACT:
A process is described for making semiconductor lasers with cleaved facets for end mirrors. The process involves electrochemically photoetching slots with deep, narrow cross-sections in a wafer and applying stress to cleave the wafer in the desired place. Extremely short and reproducible semiconductor lasers can be made by this procedure (less than 50 or even 25 .mu.m) which yields extremely useful semiconductor lasers particularly for communication applications. Also, the procedure requires a minimum of skill to produce excellent quality cleaved semiconductor lasers (including short-length lasers) with high yields.

REFERENCES:
patent: 3265599 (1966-08-01), Soonpaa
patent: 3758875 (1982-09-01), Hayashi
patent: 4096619 (1978-06-01), Cook, Jr.
patent: 4184171 (1980-01-01), Panish
patent: 4236296 (1980-12-01), Woolhouse et al.
patent: 4237601 (1980-12-01), Woolhouse et al.
patent: 4303482 (1981-12-01), Bohne et al.
patent: 4351706 (1982-09-01), Chappell et al.
patent: 4369099 (1983-01-01), Kohl et al.
patent: 4386142 (1983-05-01), Hodes et al.
patent: 4389291 (1983-06-01), Kohl et al.
patent: 4391683 (1983-07-01), Buckley et al.
patent: 4404072 (1983-09-01), Kohl et al.
patent: 4409075 (1983-10-01), Kolbesen
patent: 4414066 (1983-11-01), Forrest et al.
patent: 4415414 (1983-11-01), Burton et al.
patent: 4482442 (1984-11-01), Kohl et al.
Applied Physics Letters, 40(4), 289 (1982), Blauvelt et al.
Electronics Letters 18, No. 5, 189 (1982), O. Wade et al.
IEEE Journal of Quantum Electronics, vol. QE-18, No. 7, Jul. 1982, T. P. Lee et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication of cleaved semiconductor lasers does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of cleaved semiconductor lasers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of cleaved semiconductor lasers will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1921753

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.