Fabrication of chrome/phase grating phase shift mask by interfer

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

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G03F 900

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060133961

ABSTRACT:
A mask (50) for use in lithographic printing includes a pattern (54) formed of a material which is substantially opaque with respect to a wavelength of radiation being used in the lithographic printing. The pattern (54) on the mask (50) corresponds to a desired feature to be formed on a substrate and includes a grating (58) having an alternating pattern of opaque and transparent regions (60, 62). The alternating pattern provides destructive interference of radiation at the substrate in a region corresponding to the desired feature due to diffraction, thereby improving resolution at the substrate. In addition, the alternating pattern (60, 62) on the mask (50) increases a number of focal planes at which the destructive interference occurs and thereby improves a focus process latitude by providing an acceptable resolution over variations in a distance between the mask (50) and the substrate.

REFERENCES:
patent: 5413884 (1995-05-01), Koch et al.
patent: 5415835 (1995-05-01), Brueck et al.
patent: 5601954 (1997-02-01), Krivokapic et al.
"Lithography II: Optical Aligners and Photomasks", Silicon Processing for the VLSI Era, pp. 459-489.
"Improving Resolution in Photolithography with a Phase-Shifting Mask", IEEE Transactions on Electron Devices, vol. ED-29, No. 12, Dec., 1982, pp. 1828-1836.
"Lithography Process Control: Tolerance Limits of Deep Ultraviolet Photolithography, Electron Beam Lithography, and Scanning Probe Lithography", by Kathryn Wilder, Bhanwar Singh and David F. Kyser, The 42.sup.nd International Conference on Electron, Ion and Photon Beam Technology and Nanofabrication, Sponsored by: The American Vacuum Society in cooperative with: The Electron Devices Society of the Institute of Electrical and Electronic Engineers and The Optical Society of America, The Westin Hotel, Chicago, IL., May 26-29, 1998, 3 pages.
"Pattern-Dependent Correction of Mask Topography Effects for Alternating Phase-Shifting Masks", SPIE, vol. 2440, by Richard A. Ferguson, Alfred K. Wong, Timothy A. Brunner and Lars W. Liebmann, pp. 349-360.

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