Fabrication of capacitors with low voltage coefficient of capaci

Details Fabrication of capacitors with low voltage coefficient of capaci Fabrication of capacitors with low voltage coefficient of capaci

1998-01-05

2000-12-12

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438251, 438252, 438393, 438395, H01L 2120

Patent

active

061598194

ABSTRACT:
A method of fabricating of a capacitor with low voltage coefficient of capacitance is described. A silicon substrate with field oxide isolations is provided. A buried layer is formed by doping N-type impurities into the substrate as the bottom plate of the capacitor. A dielectric layer is formed by thermal oxidation for the capacitor, and then a polysilicon layer is formed by the low pressure chemical vapor deposition method. A thermal diffusion step is performed to dope phosphorus into the polysilicon layer. After formation of a polysilicide layer by the low pressure chemical vapor deposition method, arsenic ions are implanted into the polysilicon layer and the polysilicide layer. Finally the polysilicide layer and the polysilicon layer are partially etched in consequence, and the top plate of the capacitor is formed.

REFERENCES:
patent: 5338701 (1994-08-01), Hsu et al.
S.Wolf, Silicon Processing For The VLSI Era, vol. 1, pp. 181-182, 1986.

Affiliated with

Also associated with

Rating

Fabrication of capacitors with low voltage coefficient of capaci does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of capacitors with low voltage coefficient of capaci, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of capacitors with low voltage coefficient of capaci will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-216269