Fabrication of bipolar transistors using selective doping to imp

Details Fabrication of bipolar transistors using selective doping to imp Fabrication of bipolar transistors using selective doping to imp

1995-06-01

1997-12-16

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437162, 437909, 148DIG10, H01L 21265

Patent

active

056984596

ABSTRACT:
Parts of the emitter and base of a vertical bipolar transistor adjoin a field-isolation region to form a walled-emitter structure. The transistor is furnished with extra doping in the collector and, optionally, in the base. The extra collector doping is provided along collector-base junction below the intrinsic base to create a special collector zone spaced laterally apart from the field-isolation region. The presence of the special collector zone causes the intrinsic base to be thinner, thereby raising the cutoff frequency and overall current gain. The extra base doping is provided in the intrinsic base along the field-isolation region to improve the transistor's breakdown voltage and leakage current characteristics.

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