Fabrication of an integrated injection logic device incorporatin

Details Fabrication of an integrated injection logic device incorporatin Fabrication of an integrated injection logic device incorporatin

1978-12-14

1980-08-19

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29577R, 29578, 357 43, 357 46, B01J 1700

Patent

active

042176883

ABSTRACT:
A novel semiconductor configuration is presented utilizing a narrow, gate-like (base) structure formed of, for example, a floating polycrystalline silicon line, that is capable of modulating both the number and type of carriers (electrons or holes) flowing thereunder, between a pair of similarly doped, separated regions. One particular structure described is a four terminal I.sup.2 L configuration where the inverter transistor can function in either the mode of an MOS device or the mode of a bipolar device.

REFERENCES:
patent: 3608189 (1971-09-01), Gray
patent: 3622812 (1971-11-01), Crawford
patent: 4063273 (1977-12-01), Mueller
patent: 4124933 (1978-11-01), Nicholas

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