Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1976-11-04
1978-06-20
Rutledge, L. DeWayne
Metal working
Method of mechanical manufacture
Assembling or joining
29590, 148174, 148175, 156611, 156612, 357 4, 357 17, 357 45, 357 61, 423412, 427 87, B01J 1700, H01L 21203, H01L 21205
Patent
active
040953319
ABSTRACT:
An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.
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patent: 3493444 (1970-02-01), Sirtl et al.
patent: 3577285 (1971-05-01), Rutz
patent: 3660180 (1972-05-01), Wajda
patent: 3783009 (1974-01-01), Tramposch
patent: 3865655 (1975-02-01), Pankove
Cuomo et al., "Growing Large Area . . . Aluminum Nitride Crystals" I.B.M. Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2819-2820.
Tramposch; R. F., "Epitaxial Films . . . Chemical Vapor Transport" J. Electrochem. Soc., vol. 116, No. 5, May, 1969, pp. 654-658.
Berkenblit et al., "Reduction of Stress . . . Hetero-Epitaxial Layers" I.B.M. Tech. Disc. Bull., vol. 12, No. 9, Feb., 1970, p. 1489.
Rusz Joseph E.
Rutledge L. Dewayne
Saba W. G.
Stepanishan William
The United States of America as represented by the Secretary of
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