Fabrication of an epitaxial layer diode in aluminum nitride on s

Details Fabrication of an epitaxial layer diode in aluminum nitride on s Fabrication of an epitaxial layer diode in aluminum nitride on s

1976-11-04

1978-06-20

Rutledge, L. DeWayne

Metal working

Method of mechanical manufacture

Assembling or joining

29590, 148174, 148175, 156611, 156612, 357 4, 357 17, 357 45, 357 61, 423412, 427 87, B01J 1700, H01L 21203, H01L 21205

Patent

active

040953319

ABSTRACT:
An ultraviolet light emitting diode array of aluminum nitride grown on a sapphire substrate is fabricated by sputtering a preliminary layer of aluminum nitride onto a sapphire substrate, then placing said coated substrate in contact with a source of aluminum nitride and heating said composite in a particular atmosphere, resulting in the deposition of layers of aluminum nitride onto said coated substrate.

REFERENCES:
patent: 3291657 (1966-12-01), Sirtl
patent: 3493444 (1970-02-01), Sirtl et al.
patent: 3577285 (1971-05-01), Rutz
patent: 3660180 (1972-05-01), Wajda
patent: 3783009 (1974-01-01), Tramposch
patent: 3865655 (1975-02-01), Pankove
Cuomo et al., "Growing Large Area . . . Aluminum Nitride Crystals" I.B.M. Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2819-2820.
Tramposch; R. F., "Epitaxial Films . . . Chemical Vapor Transport" J. Electrochem. Soc., vol. 116, No. 5, May, 1969, pp. 654-658.
Berkenblit et al., "Reduction of Stress . . . Hetero-Epitaxial Layers" I.B.M. Tech. Disc. Bull., vol. 12, No. 9, Feb., 1970, p. 1489.

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