Fabrication of amorphous silicon/amorphous silicon germanium...

Details Fabrication of amorphous silicon/amorphous silicon germanium... Fabrication of amorphous silicon/amorphous silicon germanium...

2001-12-19

2004-01-20

Bennett, G. Bradley (Department: 2859)

Radiant energy

Invisible radiant energy responsive electric signalling

Infrared responsive

C438S096000

Reexamination Certificate

active

06680478

ABSTRACT:

FIELD OF THE INVENTION
This invention discloses amorphous silicon/amorphous silicon-germanium NI
1
PI
2
N used in infrared position detectors, and light-pen based digital boards.
BACKGROUND OF THE INVENTION
Infrared position detectors currently on the market, primarily consist of PIN diodes made from crystalline silicon. The structure of such detectors is designed chiefly for one-dimensional detection. Infrared detectors built with amorphous silicon or amorphous silicon-germanium alloy, have only a single detection function, detecting infrared, but not position. In 1991, L. C. Kuo et al. used a relatively thicker I layer as the absorption layer to detect infrared light (Materials Research Society Proc. Vol. 219, pp.783-789, 1991). In 1990, JYH-Wong Hong et al. put forward the Avalanche photo diode for use in infrared detectors (IEEE Quantum Electronics, Vol.26, No.2, pp.280-284, 1990). The Avalanche photo diode increases the detection efficiency of the infrared signal using a large reverse bias.
C. Y. Chen et al. suggested that in NI
1
PI
2
N infrared detector, the first NIP diode absorbs infrared light, and the second PIN diode amplifies the signal. (Appl. Phys. Lett. Vol.39, No.4, pp.340-342, 1981).
Although the aforementioned structure of infrared detectors can be used for visible light, using a crystalline silicon PIN to absorb infrared light, neither supports two-dimensional large-scale position detection, nor effectively prohibits visible light signals from being absorbed.
The infrared detectors that include an amorphous silicon-germanium alloy PINs, designed by L. C. Kuo et al., failed to prohibit visible light absorption and leading to inefficient detection. The Avalanche photo diode put forward by JYH-Wong Hong et al., generates an amplified Avalanche signal under a large reverse bias, can not prohibit visible light from absorption either. Despite possessing a structure similar to that of this invention, the NI
1
PI
2
N structure suggested by C. Y. Chen et al, follows a different principle and can not prohibit visible light from: absorption, because the front NI
1
P diode absorbs infrared light, whereas the rear diode PI
2
N amplifies the signal.
SUMMARY OF THE INVENTION
The primary purpose of the invention is to disclose the amorphous silicon/amorphous silicon-germanium NI
1
P
2
N used for infrared position detection. The material of the I
1
layer absorbs visible light, and I
2
layer absorbs infrared light. The suppression of the signal due to the absorption of the visible light and the increase in the signal due to the absorption of the infrared light, can be obtained by a NI
1
P diode under forward bias and the PI
2
N diode under reverse bias.
The second purpose of the invention is to disclose the manufacture method of amorphous silicon-germanium alloy. It is produced by modulating RF plasma with a square wave pulse and diluting hydrogen.
The invention can be modified in a number of ways. Illustrative examples are presented.


REFERENCES:
patent: 4785186 (1988-11-01), Street et al.
patent: 4881979 (1989-11-01), Lewis
patent: 5589688 (1996-12-01), Kimura et al.
patent: 6169284 (2001-01-01), Caputo et al.
patent: 6323059 (2001-11-01), Yoshida et al.

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