Fabrication of active areas of different natures directly...

Details Fabrication of active areas of different natures directly... Fabrication of active areas of different natures directly...

2004-06-25

2010-10-26

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S406000, C438S168000, C257SE21567, C257SE21335, C257S190000, C257S347000, C257S192000, C117S094000, C117S915000, C117S939000

Reexamination Certificate

active

07820523

ABSTRACT:
The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.

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