Fabrication of a waveguide taper through ion implantation

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S514000

Reexamination Certificate

active

06989284

ABSTRACT:
A method to form a taper in a semiconductor layer. In one embodiment, the semiconductor layer is formed on a cladding layer. A mask layer is formed on the semiconductor layer. The mask layer is patterned and etched to form at least an angled region and a thick region. An ion implantation process is performed so that the portion under the angled region is implanted to have an interface or surface that is angled relative to the surface of the cladding layer. This angled surface forms part of the vertical taper. The implanted region does not contact the cladding layer, leaving an unimplanted portion to serve as a waveguide. The portion under the thick region is not implanted, forming a coupling end of the taper.

REFERENCES:
patent: 4371966 (1983-02-01), Scifres et al.
patent: 4773720 (1988-09-01), Hammer
patent: 4911516 (1990-03-01), Palfrey et al.
patent: 5078516 (1992-01-01), Kapon et al.
patent: 5121182 (1992-06-01), Kuroda et al.
patent: 5349602 (1994-09-01), Mehuys et al.
patent: 5442723 (1995-08-01), Vinchant et al.
patent: 5574742 (1996-11-01), Ben-Michael et al.
patent: 5708750 (1998-01-01), Kevorkian et al.
patent: 5720893 (1998-02-01), Ben-Michael et al.
patent: 5844929 (1998-12-01), Lealman et al.
patent: 5867623 (1999-02-01), Broquin et al.
patent: 5987046 (1999-11-01), Kobayashi et al.
patent: 5990530 (1999-11-01), Suzuki
patent: 6108478 (2000-08-01), Harpin et al.
patent: 6174748 (2001-01-01), Jeon et al.
patent: 6200502 (2001-03-01), Paatzsch et al.
patent: 6219366 (2001-04-01), Furushima
patent: 6229947 (2001-05-01), Vawter et al.
patent: 6293688 (2001-09-01), Deacon
patent: 6312144 (2001-11-01), Li
patent: 6380092 (2002-04-01), Annapragada et al.
patent: 6381380 (2002-04-01), Forrest et al.
patent: 6385371 (2002-05-01), Li
patent: 6411764 (2002-06-01), Lee
patent: 6483863 (2002-11-01), Forrest et al.
patent: 6516117 (2003-02-01), Fujimaki et al.
patent: 6516127 (2003-02-01), Fluck et al.
patent: 6522801 (2003-02-01), Aksyuk et al.
patent: 6760529 (2004-07-01), Chong et al.
patent: 6813417 (2004-11-01), Oh et al.
patent: 6813432 (2004-11-01), Salib
patent: 6813471 (2004-11-01), Sawai et al.
patent: 6816660 (2004-11-01), Nashimoto
patent: 2002/0131744 (2002-09-01), Evans et al.
patent: 2003/0007766 (2003-01-01), Galarza et al.
patent: 2003/0068152 (2003-04-01), Gunn, III
patent: 0 821 250 (1998-01-01), None
patent: 52137359 (1977-11-01), None
patent: 53106152 (1978-09-01), None
patent: 05011131 (1993-01-01), None
patent: 09297235 (1997-11-01), None
patent: 11284061 (1999-10-01), None
patent: WO 95/13553 (1995-05-01), None
patent: WO 00/36442 (2000-06-01), None
patent: PCT/US 03/12364 (2003-08-01), None
patent: PCT/US 03/11833 (2003-10-01), None
patent: PCT/US 03/12364 (2004-06-01), None
patent: PCT/US03/12364 (2004-11-01), None
Brenner, T., et al., “Vertically Tapered InGaAsP/InP Waveguides for Highly Efficient Coupling to Flat-End Single-Mode Fibers,” American Institute of Physics, vol. 65, Aug. 15, 1994, pp. 798-800, Woodbury, NY, US.
Luo, Jianfeng, et al., “Integrated Model for Chemical-Mechanical Polishing Based on a Comprehensive Material Removal Model”, Sixth International Conference on Chemical-Mechanical Polish (CMP) Planarization for ULSI Multilevel Interconnection (CMP-MIC), Mar. 8-9, 2001, pp. 1-8.
Smekalin, Konstantin, “CMP Dishing Effects In Shallow Trench Isolation”, Magazine vol. 40, Issue 7, Jul. 1, 1997, pp. 1-6.
Layadi, A., et al., “Low-Loss Optical Waveguide On Standard SOI/SIMOX Substrate,” Elsevier Science V.B., Optics Communications, North-Holland Publishing Co., Amsterdam, NL, vol. 146, No. 1-6, (Jan. 15, 1998) pp 31-33.
Weiss, B.L., et al., Optical Waveguides in SIMOX Structures, IEEE Photonics Technology Letters, vol. 3, No. 1, (Jan. 1991) pp 19-21.
Rickman, A., et al., “Low-Loss Planar Optical Waveguides Fabricated in SIMOX Material,” IEEE Photonics Technology Letters, vol. 4, No. 6 (Jun. 1, 1992) pp 633-635.
Von Bibra, M.L., et al., “Ion Beam Energy Attenuation For Fabrication Of Buried Variable-Depth, Optical Waveguides,” Nuclear Instruments & Methods In Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 168, No. 1 (May 2000) pp 47-52.
Hecht, J., “Understanding Fiber Optics,” 1998, Prentice-Hall, 3rded., p. 108.

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