Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-10-09
2000-06-20
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 64, 257 66, 257 69, H01L 2978, H01L 3300
Patent
active
060780592
ABSTRACT:
A thin film transistor includes: an insulating film having a surface; a semiconductor film formed on the surface of the insulating film; a source electrode and a drain electrode which are in contact with the semiconductor film; and a gate electrode which is electrically insulated from the semiconductor film. In the thin film transistor, a portion of the semiconductor film at distances of less than 500 angstroms from the surface of the insulating film contains at least silicon including a microcrystalline structure having a conductivity of 5.times.10.sup.-9 S/cm or more. Also, a method for fabricating such a thin film transistor is disclosed. The method includes a step of forming a semiconductor film including a silicon layer having a microcrystalline structure by repeatedly performing the following steps (1) and (2): (1) forming a silicon layer on an insulating film by decomposing a material gas including Si which is introduced into a reaction chamber of a plasma chemical vapor deposition apparatus; and (2) microcrystallizing the silicon layer by introducing the hydrogen gas into the chamber to perform a hydrogen plasma treatment for the silicon layer.
REFERENCES:
patent: 5403756 (1995-04-01), Yoshinouchi et al.
patent: 5576229 (1996-11-01), Murata et al.
patent: 5686349 (1997-11-01), Nakata
patent: 5707882 (1998-01-01), Hamada et al.
Japanese Patent Abstract of JP4137525, published on May 12, 1992.
Japanese Patent Abstract of JP4266019, published on Sep. 22, 1992.
Otobe et al., Jpn. J. Appl. Appl. Phys., vol. 31, pp. 1948-1952 (1992).
K. Nomoto et al., Japanese Journal of Applied Physics, vol. 29, No. 8, pp. L1372-L1375 (1990).
Nakazawa et al., Japanese Journal of Applied Physics, vol. 28, No. 4, pp. 569-572 (1989).
Johnson et al., Apply. Phys. Lett. 53, 17 (1988).
Lampert, C.M., Solar Energy Materials, 11 85-95 (1984).
Matsuda, A., Journal of Non-Crystalline Solids 59 & 60, pp. 767-774 (1983).
Japanese Patent Publication of 60-98680, published on Jun. 1, 1985.
Japanese Patent Publication of 61-59873, published on Mar. 27, 1986.
Kanicki, J. et al., Mat. Res. Soc. Symp. Proc. 149 (1989).
Ikuta, K. et al., Non-Crystalline Solids 198-200:863-866 (1996).
Roca i Carraocas, P. et al., J. Non-Crystalline Solids 198-200:871-874 (1996).
Koynov, S. et al., J. Non-Crystalline Solids 198-200:1012-1016 (1996).
Buchanan Robert L.
Conlin David G.
Meier Stephen D.
Sharp Kabushiki Kaisha
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