Fabrication of a semiconductor device containing deep emitter an

Details Fabrication of a semiconductor device containing deep emitter an Fabrication of a semiconductor device containing deep emitter an

1987-08-26

1988-11-08

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 59, 357 43, H01L 2704

Patent

active

047834234

ABSTRACT:
A semiconductor device comprising a deep emitter region having a high withstand voltage between the collector and emitter V.sub.CEO and another element comprising a doped region which should be substantially shallower than the deep emitter region, may be fabricated without losing a well controlled current amplification factor h.sub.FE and a desired characteristic of the other element owing to the shallow doped region, by using a first dopant having a large diffusion coefficient for doping the emitter region and a second dopant having a small diffusion coefficient for doping the shallow-doped region and by carrying out a heat treatment necessary for doping the first dopant into the deep emitter region after the second dopant has been introduced into the shallow doped region so that no further heat treatment is needed after the first dopant has been doped into the deep emitter region during the process for fabricating the semiconductor device.

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