1974-12-23
1976-02-03
Lynch, Michael J.
357 59, H01L 2978, H01L 2904
Patent
active
039368602
ABSTRACT:
A semiconductor material of a first conductivity type has one of its surfaces subjected to high energy oxygen ion implantation, thereby forming an oxide layer below that surface. A gate is formed by masking at least a portion of the surface, exposing the unmasked portion to ion radiation so as to implant impurity ions in the region of the semiconductor material between its unmasked surface and the upper side of the subsurface oxide layer, and metallizing the surface above the implanted region. After removal of the masking material, source and drain areas are formed by high energy ion implantation in the semiconductor material adjacent the lower side of the subsurface oxide layer, the areas having a conductivity opposite the first conductivity type. After windows to the source and drain areas are opened in the semiconductor material and subsurface oxide layer, the exposed surfaces of these areas are metallized.
REFERENCES:
patent: 3600651 (1971-08-01), Duncan
Kuhn Cedric H.
Lynch Michael J.
Rusz Joseph E.
Wojciechowicz E.
LandOfFree
Fabrication of a semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of a semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of a semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2126200