Fabrication of a low defect germanium film by direct wafer...

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S458000, C117S001000, C257SE21568

Reexamination Certificate

active

10985444

ABSTRACT:
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.

REFERENCES:
patent: 6537370 (2003-03-01), Hernandez et al.
patent: 6635110 (2003-10-01), Luan et al.
patent: 6645831 (2003-11-01), Shaheen et al.
patent: 6921914 (2005-07-01), Cheng et al.
patent: 6927147 (2005-08-01), Fitzgerald et al.
patent: 6991956 (2006-01-01), Ghyselen et al.
patent: 7141834 (2006-11-01), Atwater et al.
patent: 2004/0173791 (2004-09-01), Cheng et al.
Hartmann et al.,Reduced pressure-chemical vapor deposition of Ge thick layers on Si(001)for 1.3-1.55-μm photodetection, Journal of Applied Physics, 2004, 95, 5905.
Liu et al.,High-quality single-crystal Ge on insulator by liquid-phase epitaxy on Si substrates, Appl Phys Lett, 2004, 84, 2563.
Ritenour et al.,Epitaxial Strained Germanium p-MOSFETs with HfO2Gate Dielectric and TaN Gate Electrode, International Electron Devices Meeting Technical Digest, 2003, p. 03-433.
Chui et al.,A Germanium NMOSFET Process Integrating Metal Gate and Improved Hi-k Dielectrics, International Electron Devices Meeting Technical Digest, 2003, p. 03-437.
Low et al.,Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current, 2003 Symposium on VLSI Technology Digest, p. 117-118.
Bai et al.,Ge MOS Characteristics with CVD HfO2Gate Dielectrics and TaN Gate Electrode, 2003 Symposium on VLSI Technology Digest, p. 121.
Huang et al.,Very Low Defects and High Performance Ge-On-Insulator p-MOSFETs with Al2O3Gate Dielectrics, 2003 Symposium on VLSI Technology Digest, p. 119.
Takagi,Re-examination of Subband Structure Engineering in Ultra-Short Channel MOSFETs under Ballistic Carrier Transport, 2003 Symposium on VLSI Technology Digest, p. 115.
Nakaharal et al.,Characterization of 7-nm-thick strained Ge-on-insulator layer fabricated by Ge-condensation technique, Appl Phys Lett, 2003, 83, 3516.
Famà et al.,High performance germanium-on-silicon detectors for optical communications. Appl Phys Lett, 2002, 81, 856.
Colace et al.,Efficient high-speed near-infrared Ge photodectors integrated on Si substrates, Appl Phys Lett., 2000, 76, 1231.
Luan et al.,High-quality Ge epilayers on Si with low threading-dislocation densities, Appl Phys Lett, 1999, 75, 2909.
Hofmann et al.,Surfactant-grown low-doped germanium layers on silicon with high electron mobilities, Thin Solid Films, 1998, 321, 125.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Fabrication of a low defect germanium film by direct wafer... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of a low defect germanium film by direct wafer..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of a low defect germanium film by direct wafer... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3749648

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.