Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates
Reexamination Certificate
2007-07-24
2007-07-24
Toledo, Fernando L. (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
C438S458000, C117S001000, C257SE21568
Reexamination Certificate
active
10985444
ABSTRACT:
A method of fabricating a low defect germanium thin film includes preparing a silicon wafer for germanium deposition; forming a germanium film using a two-step CVD process, annealing the germanium thin film using a multiple cycle process; implanting hydrogen ions; depositing and smoothing a layer of tetraethylorthosilicate oxide (TEOS); preparing a counter wafer; bonding the germanium thin film to a counter wafer to form a bonded structure; annealing the bonded structure at a temperature of at least 375° C. to facilitate splitting of the bonded wafer; splitting the bonded structure to expose the germanium thin film; removing any remaining silicon from the germanium thin film surface along with a portion of the germanium thin film defect zone; and incorporating the low-defect germanium thin film into the desired end-product device.
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Hsu Sheng Teng
Lee Jong-Jan
Maa Jer-Shen
Tweet Douglas J.
Ripma David C.
Sharp Laboratories of America Inc.
Toledo Fernando L.
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