Fabrication of a heterogeneous semiconductor structure with comp

Details Fabrication of a heterogeneous semiconductor structure with comp Fabrication of a heterogeneous semiconductor structure with comp

1978-08-01

1979-10-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29572, 29576E, 29580, 148 15, 148174, 156611, 156613, 357 16, 357 88, H01L 2120, H01L 2914

Patent

active

041719964

ABSTRACT:
A method for producing a heterogeneous semiconductor structure with a composition gradient in which a semiconductor material is transferred through the gaseous phase onto the substrate from a source comprising the two AB and AC components and including a number of parallel strips, each of said strips having a constant ratio between the AB and AC components. At first, the source is gradually brought under the substrate at a speed chosen within the range of 100 cm per hour to 0.1 cm per hour, bringing first the strip of the source, which has a maximum content of the AB component. As all the strips have been brought under the substrate, the source is stopped for a period of time required for the formation of the main layer of a required thickness.

REFERENCES:
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patent: 3925118 (1975-12-01), Hollan
Yoshikawa et al., "Optical Properties of Hetero-Epitaxial CdS Films", Japanese J. Applied Physics, vol. 13, No. 9. Sep. 1974, pp. 1353-1361.

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