Fabrication of a FeRAM capacitor using a noble metal hardmask

Details Fabrication of a FeRAM capacitor using a noble metal hardmask Fabrication of a FeRAM capacitor using a noble metal hardmask

2005-03-15

2005-03-15

Kang, Donghee (Department: 2811)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S240000, C438S253000, C438S254000, C257S295000

Reexamination Certificate

active

06867053

ABSTRACT:
A ferroelectric capacitor is fabricated using a noble metal hardmask. A hardmask is deposited on a top electrode of a capacitor stack comprising a ferroelectric layer sandwiched between the top electrode and a bottom electrode. The top electrode is patterned according to the pattern of the hardmask by etching at a first temperature. The top electrode serves as the noble metal hardmask and the ferroelectric layer is patterned according to the pattern of the top electrode at a second temperature lower than the first temperature, resulting in the top electrode having sidewalls beveled relative to a top surface of the top electrode etching. The bottom electrode is etched at a third temperature to form the capacitor.

REFERENCES:
patent: 6497992 (2002-12-01), Yunogami et al.
patent: 6713310 (2004-03-01), Song et al.
patent: 6746878 (2004-06-01), Komuro et al.

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