Fabrication of a bipolar transistor with a polysilicon ribbon

Details Fabrication of a bipolar transistor with a polysilicon ribbon Fabrication of a bipolar transistor with a polysilicon ribbon

1986-08-28

1988-02-02

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437152, 437160, 437161, 437162, 437168, 437191, 437200, 357 34, H01L 2131, H01L 2122, H01L 21265, H01L 21302

Patent

active

047229080

ABSTRACT:
In the fabrication of bipolar transistors by the single poly process, polysilicon sidewalls are formed along portions of a polysilicon layer that functions as a device contact. The sidewalls serve both as dopant sources which determine the width of underlying base and emitter regions, and as contacts to those devices. Since the thickness of the polysilicon sidewalls, and hence the width of the underlying device regions, are precisely controllable through conventional polysilicon deposition techniques, relatively relaxed design rules can be employed while making possible the formation of emitters having widths less than one-half of a micron.

REFERENCES:
patent: 4157269 (1979-06-01), Ning et al.
patent: 4343080 (1982-08-01), Hataishi et al.
patent: 4464212 (1984-08-01), Bhatia et al.
patent: 4531282 (1985-07-01), Sakai et al.
patent: 4545114 (1985-10-01), Ito et al.
patent: 4555842 (1985-12-01), Levinstein et al.
patent: 4583106 (1986-04-01), Anantha et al.
patent: 4599789 (1986-07-01), Gasner

Affiliated with

Also associated with

Rating

Fabrication of a bipolar transistor with a polysilicon ribbon does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Fabrication of a bipolar transistor with a polysilicon ribbon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of a bipolar transistor with a polysilicon ribbon will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1635708