Fabrication methods for ultra thin back-illuminated...

Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Responsive to electromagnetic radiation

Reexamination Certificate

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C257S443000, C257S460000, C438S060000

Reexamination Certificate

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07112465

ABSTRACT:
Ultra thin back-illuminated photodiode array structures and fabrication methods. The photodiode arrays are back illuminated photodiode arrays having a substrate of a first conductivity type having first and second surfaces, the second surface having a layer of the first conductivity type having a greater conductivity than the substrate. The arrays also have a matrix of regions of a first conductivity type of a higher conductivity than the substrate extending from the first surface of the substrate to the layer of the first conductivity type having a greater conductivity than the substrate, a plurality of regions of the second conductivity type interspersed within the matrix of regions of the first conductivity type and not extending to the layer of the first conductivity type on the second surface of the substrate, and a plurality of contacts on the first surface for making electrical contact to the matrix of regions of the first conductivity type and the plurality of regions of the second conductivity type.

REFERENCES:
patent: 4144096 (1979-03-01), Wada et al.
patent: 5072312 (1991-12-01), Schwarzbauer et al.
patent: 5075748 (1991-12-01), Hisa
patent: 5538564 (1996-07-01), Kaschmitter
patent: 5670383 (1997-09-01), Piccone et al.
patent: 6111305 (2000-08-01), Yoshida et al.
patent: 6184100 (2001-02-01), Arai
patent: 6426991 (2002-07-01), Mattson et al.
patent: 6504178 (2003-01-01), Carlson et al.
patent: 6653164 (2003-11-01), Miida
patent: 6933489 (2005-08-01), Fujii et al.
patent: 2002/0020846 (2002-02-01), Pi et al.
patent: 2002/0058353 (2002-05-01), Merrill
patent: 2002/0148967 (2002-10-01), Iwanczyk et al.
patent: 2003/0209652 (2003-11-01), Fujii et al.
patent: 2004/0104351 (2004-06-01), Shibayama
patent: 2004/0129992 (2004-07-01), Shibayama
Derenzo, Stephen E., “Initial Characterization of a BGO-Photodiode Detector for High Resolution Positron Emission Tomography”, Feb. 1984, IEEE Transactions on Nuclear Science, vol. NS-31, No. 1, pp. 620-626.
Takahashi, Tetsuhiko et al., “Design of Integrated Radiation Detectors with a-Si Photodiodes on Ceramic Scintillators for use in X-Ray Computed Tomography”, Jun. 1990, IEEE Transactions on Nuclear Science, vol. 37, No. 3, pp. 1478-1482.
Burns, H. N. “Buck” et al., “Compact, 625-channel scannerless imaging laser radar receiver”, 1996, Proc. SPIE, vol. 2748, pp. 39-46.
Iwanczyk, J.S. et al., “Simulation and modelling of a new silicon X-ray drift detector design for synchrotron radiation applications”, 1996, Nuclear Instruments and Methods in Physics Research, Section A, vol. 380, pp. 288-294.
Kwa, Tommy A. et al., “Backside-Illuminated Silicon Photodiode Array for an Integrated Spectrometer”, May 1997, IEEE Transactions on Electron Devices, vol. 44, No. 5, pp. 761-765.
Holland, S.E. et al., “Development of Low Noise, Back-Side Illuminated Silicon Photodiode Arrays”, Jun. 1997, IEEE Transactions on Nuclear Science, vol. 44, No. 3, pp. 443-447.
Patt, B.E. et al., “High Resolution CsI(T1)/Si-PIN Detector Development for Breast Imaging”, Aug. 1998, IEEE Transactions on Nuclear Science, vol. 45, No. 4, pp. 2126-2131.
Vishay Semiconductors S268P Data Sheet, “Silicon PIN Photodiode Array”, May 20, 1999, Document No. 81538, pp. 1-5.
Detection Technology, Inc., “New Photodiode Array Products for Computer Tomography-Detectors”, News Bulletin for the Customers and Cooperation Partners, Winter 2000-2001.
Patt, B.E. et al., “Fast-Timing Silicon Photodetectors”, Jun. 2000, IEEE Transactions on Nuclear Science, vol. 47, No. 3, pp. 957-964.
Hamamatsu Photonics K.K., Solid State Division, “Si Photodiode Catalog”, Feb. 2002, pp. 1-25.
Tornai, Martin P. et al., “A novel silicon array designed for intraoperative charged particle imaging”, Nov. 2002, Medical Physics, vol. 29, No. 11, pp. 2529-2540.
Luhta, Randy et al., “Back Illuminated Photodiodes for Multislice CT”, Feb. 15-20, 2003, San Diego, California USA.
Yang, Min et al., “High Speed Silicon Lateral Trench Detector on SOI Substrate”, International Electron Devices Meeting, Dec. 2-5, 2001, New York, NY, IEDM Technical Digest, pp. 24.1.1-24.1.4, IEEE, US.

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