Fabrication method, varactor, and integrated circuit

Details Fabrication method, varactor, and integrated circuit Fabrication method, varactor, and integrated circuit

2006-04-11

2006-04-11

Tsai, H. Jey (Department: 2812)

Electrical connectors

With coupling movement-actuating means or retaining means in...

Including lock for retaining means

C438S329000, C438S379000

Reexamination Certificate

active

07025615

ABSTRACT:
A method in the fabrication of an integrated bipolar circuit for forming a p
-junction varactor is disclosed. The method featuring the steps of providing a p-doped substrate (10; 10, 41); forming a buried n+-doped region (31) in the substrate; forming in the substrate an n-doped region (41) above the buried n+-doped region (31); forming field isolation (81) around the n-doped region (41); multiple ion implanting the n-doped region (41); forming a p+-doped region (151) on the n-doped region (41); forming an n+-doped contact region to the buried n+-doped region (31), the contact region being separated from the n-doped region (41); and heat treating the hereby obtained structure to set the doping profiles of the doped regions. The multiple ion implantation of the n-doped region (41); the formation of the p+-doped region (151); and the heat treatment are performed to obtain a hyper-abrupt p+
-junction within the n-doped region (41).

REFERENCES:
patent: 4106953 (1978-08-01), Onodera
patent: 5024955 (1991-06-01), Kasahara
patent: 5405790 (1995-04-01), Rahim et al.
patent: 5477197 (1995-12-01), Logan
patent: 5506442 (1996-04-01), Takemura
patent: 6559024 (2003-05-01), Boles et al.
patent: 1 139 434 (2001-03-01), None
patent: WO 01/20664 (2001-03-01), None
patent: WO 01/95396 (2001-12-01), None
Norwood, Marcus H. et al.; “Voltage Variable Capacitor Tuning: A Review”; Proceedings of the IEEE, vol. 56, No. 5; pp. 788-797, 1968.

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