Fabrication method using oxidation to control size of fusible li

Details Fabrication method using oxidation to control size of fusible li Fabrication method using oxidation to control size of fusible li

1989-08-18

1991-05-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437922, 437192, 148DIG55, H01L 2144

Patent

active

050156047

ABSTRACT:
The size of a fusible link (22C.sub.F) created from part of a metal layer (22) is controlled by an oxidation performed in a deposition chamber that is also used for depositing a dielectric layer (30) over the fuse structure. The metal layer serves as a diffusion barrier between semiconductor material (14 and 16) and another metal layer (24).

REFERENCES:
patent: 4491860 (1985-01-01), Lim
patent: 4740485 (1988-04-01), Sharpe-Geisler
patent: 4882293 (1989-11-01), Naumann et al.

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