Fabrication method to produce pit-free polysilicon buffer local

Details Fabrication method to produce pit-free polysilicon buffer local Fabrication method to produce pit-free polysilicon buffer local

1992-11-27

1994-08-16

Thomas, Tom

Fishing, trapping, and vermin destroying

437 69, 437926, 437968, H01L 2176

Patent

active

053387503

ABSTRACT:
A method of forming a silicon oxide isolation region on the surface of a silicon wafer consisting of a thin layer of silicon oxide on the wafer, a layer of impurity-doped polysilicon, and a layer of silicon nitride. The oxidation mask is formed by patterning the silicon nitride layer and at least a portion of the doped polysilicon layer. The silicon oxide field isolation region is formed by subjecting the structure to a thermal oxidation ambient. The oxidation mask is removed in one continuous etching step using a single etchant, such as phosphoric acid which etches the silicon nitride and polysilicon layers at substantially the same rate to complete the formation of the isolation region without pitting the monocrystalline substrate.

REFERENCES:
patent: 4407696 (1983-10-01), Han et al.
patent: 4897364 (1990-01-01), Nguyen et al.
patent: 5002898 (1991-03-01), Fritzinger et al.
patent: 5196367 (1993-03-01), Lu et al.
patent: 5215930 (1993-06-01), Lee et al.

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