Fabrication method of transparent electrode on visible...

Details Fabrication method of transparent electrode on visible... Fabrication method of transparent electrode on visible...

2007-03-09

2009-06-02

Tran, Long K (Department: 2818)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S048000, C438S956000, C257S019000, C257S079000, C257S086000, C257S749000, C257SE33056, C257SE33057, C257SE33058, C257SE33059, C257SE25032

Reexamination Certificate

active

07541205

ABSTRACT:
A method for forming a transparent electrode on a visible light-emitting diode is described. A visible light-emitting diode element is provided, and the visible light-emitting diode element has a substrate, an epitaxial structure and a metal electrode. The metal electrode and the epitaxial structure are located on the same side of the substrate, or located respectively on the different sides of the substrate. An ohmic metal layer is formed on a surface of the epitaxial structure. The ohmic metal layer is annealed. The ohmic metal layer is removed to expose the surface of the epitaxial structure. A transparent electrode layer is formed on the exposed surface. A metal pad is formed on the transparent electrode layer.

REFERENCES:
patent: 6693352 (2004-02-01), Huang et al.

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