Fabrication method of superconductive thin film transistor

Details Fabrication method of superconductive thin film transistor Fabrication method of superconductive thin film transistor

1992-03-24

1994-07-05

Wilczewski, Mary

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Semiconductor device or thin film electric solid-state...

505701, 505833, 437 41, 437 42, 437984, H01L 3922, H01L 4902, H01L 2701, H01L 2348

Patent

active

053267460

ABSTRACT:
A planar type superconductive thin film transistor using oxide superconductive materials and utilizing a long distance proximity effect is obtained with a good reproducibility.
In order to obtain the planar type superconductive transistor utilizing the long distance proximity effect, an interlayer separating film that plays a similar role with resists is used together with conventional resists in high temperature annealing process.

REFERENCES:
patent: 5024993 (1991-06-01), Kroger et al.
patent: 5064809 (1991-11-01), Hed
patent: 5138401 (1992-08-01), Yamazaki

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