Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1997-05-30
1999-10-26
Chaudhari, Chandra
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
438 99, H01G 900
Patent
active
059720522
ABSTRACT:
A fabrication method of a solid electrolytic capacitor is provided, which is able to form the surface irregularity of a conductive polymer layer serving as a solid electrolyte with good controllability and good stability. A capacitor body is formed by a valve metal. The body serves as an anode of the capacity. An oxide layer is formed to cover the surface of the capacitor body. The oxide layer serves as a dielectric of the capacitor. A first conductive polymer layer is formed on the oxide layer. The first conductive polymer layer serves as a part of a solid electrolyte of the capacitor. A powder of a conductive polymer is deposited on the first conductive polymer layer by spraying a fluid containing the powder on the first conductive polymer. A second conductive polymer layer is formed on the first conductive polymer layer to cover the deposited powder. The surface of the second conductive polymer layer has irregularities corresponding to the deposited powder. The second conductive polymer layer serves as another part of the solid electrolyte of the capacitor.
REFERENCES:
patent: 4609971 (1986-09-01), Shaffer
patent: 5428500 (1995-06-01), Nishiyama et al.
patent: 5457862 (1995-10-01), Sakata et al.
patent: 5586000 (1996-12-01), Sakata et al.
Date Tomohide
Fukaumi Takashi
Kobayashi Atsushi
Ooi Masashi
Chaudhari Chandra
NEC Corporation
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