Fabrication method of semiconductor luminescent device

Details Fabrication method of semiconductor luminescent device Fabrication method of semiconductor luminescent device

2007-01-10

2009-12-08

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

C438S029000, C438S031000, C438S046000, C257SE21001

Reexamination Certificate

active

07629187

ABSTRACT:
A fabrication method of a semiconductor luminescent device includes forming a compound semiconductor layer having a structure in which a first conductivity-type clad layer, an active layer, a second conductivity-type clad layer are layered in order on a substrate, the second conductivity-type being different from the first conductivity-type and forming a low-refractive-index region in a waveguide in an area to be an end face from which an output light from the waveguide in the compound semiconductor layer is emitted, the low-refractive-index region having an equivalent refractive-index lower than that of another area in the waveguide. The step of forming the low-refractive-index region includes determining a width of the low-refractive-index region in a longitudinal direction of the waveguide so that an emission angle of the output light of the semiconductor luminescent device is controlled to be a desirable value, and forming the low-refractive-index region having the width.

REFERENCES:
patent: 7561608 (2009-07-01), Takase
patent: 2004/0264520 (2004-12-01), Takase
patent: 1578028 (2005-02-01), None
patent: 2005-19679 (2005-01-01), None
Chinese Office Action dated Jun. 13, 2008, Application No. 2007100013092.

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