Fabrication method of semiconductor laser by MOVPE

Details Fabrication method of semiconductor laser by MOVPE Fabrication method of semiconductor laser by MOVPE

1994-07-29

1998-06-09

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 90, 438289, C30B 2502

Patent

active

057627053

ABSTRACT:
A fabrication method of a semiconductor QW laser by MOVPE with a high fabrication yield, providing a laser device sufficiently reliable in operation over long period of time and applicable for optical communications. An InGaAs QW active layer is grown on a first semiconductor layer formed on or over a semiconductor substrate at a growth temperature ranging from 580.degree. to 640.degree. C. Then, a second semiconductor layer is grown on the active layer at the same growth temperature as that of the active layer. Preferably, the active layer is grown under a condition that the total pressure in a growth chamber is substantially equal to an atmospheric pressure and a partial pressure of arsine (AsH.sub.3) for As component ranges from 1.6.times.10.sup.-7 to 3.times.10.sup.-1 Torr.

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