Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2008-05-27
2008-05-27
Arbes, C. J (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S832000, C029S840000, C438S126000, C438S127000
Reexamination Certificate
active
07377031
ABSTRACT:
A method of fabricating a semiconductor integrated circuit device uses a mold which is provided with a plurality of air vents and movable pins which are formed such that the movable pins include grooves in the distal ends thereof which project into the air vents. By clamping the mold in a state such that the distal ends of the movable pins are pushed against a multi-cavity board at the time of clamping the mold, resin can be filled while leaking air inside the cavity through the grooves formed in the distal ends of the movable pins by setting the depths of the respective air vents to a fixed value irrespective of the irregularities in thickness of the multi-cavity boards. Accordingly, it is possible to prevent insufficient filling of resin in the cavity, the leaking of resin or defective welding, whereby the yield rate of products can be enhanced.
REFERENCES:
patent: 4857483 (1989-08-01), Steffen et al.
patent: 5728600 (1998-03-01), Saxelby et al.
patent: 5834035 (1998-11-01), Osada et al.
patent: 5891384 (1999-04-01), Miyajima
patent: 5910010 (1999-06-01), Nishizawa et al.
patent: 6350113 (2002-02-01), Miyajima
patent: 6444157 (2002-09-01), Miyajima
patent: 6498055 (2002-12-01), Fukuda et al.
patent: 6676885 (2004-01-01), Shimizu et al.
patent: 7037760 (2006-05-01), Kuratomi et al.
patent: 2005/0070047 (2005-03-01), Kuratomi et al.
patent: 10-092853 (1998-10-01), None
Kuratomi Bunshi
Shimizu Fukumi
Antonelli, Terry Stout & Kraus, LLP.
Arbes C. J
Renesas Eastern Japan Semiconductor Inc.
Renesas Technology Corp.
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