Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2007-11-07

2008-09-09

Lindsay, Jr., Walter (Department: 2812)

Semiconductor device manufacturing: process

With measuring or testing

C438S015000, C438S018000, C257SE23179, C257SE21705, C257SE21503

Reexamination Certificate

active

07422914

ABSTRACT:
A memory test is carried out on semiconductor integrated circuit devices including a semiconductor memory at low cost with efficiency. In a test burn-in system, twenty-four test boards are processed in sequence with time differences, and the test boards are circulated one by one. In this case, the memory test is conducted with the sequence of single board processing: the test is started with a test board in which semiconductor integrated circuit devices have been embedded, and semiconductor integrated circuit devices are discharged, beginning with a test board that has undergone the test.

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