Semiconductor device manufacturing: process – With measuring or testing – Packaging or treatment of packaged semiconductor
Reexamination Certificate
2007-06-26
2007-06-26
Nuynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
With measuring or testing
Packaging or treatment of packaged semiconductor
C438S014000, C438S017000, C324S754090, C324S758010
Reexamination Certificate
active
10968431
ABSTRACT:
Any damage inflicted on test pads, inter-layer insulating films, semiconductor elements or wiring at the time of electrical inspection of semiconductor integrated circuit devices is to be reduced. Reinforcements having a substantially equal linear expansion ratio (coefficient of thermal expansion) relative to a wafer to be inspected are formed over an upper face of a thin film probe, grooves are cut in the reinforcements above the probes, a first elastomer which is softer than a second elastomer is so arranged as to fill the grooves and overflow the grooves by a prescribed quantity, a glass epoxy substrate, which is a multi-layered wiring board, is fitted over the second elastomer, and pads provided over an upper face of the glass epoxy substrate and bonding pads which are part of wirings belonging to the thin film probe are electrically connected by wires.
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JP 2002090387 A, Wilson et al., English Abstract.
Hasebe Akio
Motoyama Yasuhiro
Narizuka Yasunori
Shoji Teruo
Antonelli, Terry Stout & Kraus, LLP.
Nuynh Andy
Renesas Technology Corp.
Taylor Earl
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