Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2007-05-22

2007-05-22

Kim, Paul D (Department: 3729)

Metal working

Method of mechanical manufacture

Electrical device making

C029S025010, C029S417000, C029S831000, C029S846000, C029S854000, C324S754090, C324S755090, C324S758010, C324S761010, C324S765010, C427S129000, C427S130000, C438S014000, C438S015000, C438S016000, C438S017000, C438S018000

Reexamination Certificate

active

10765917

ABSTRACT:
The fabrication of a semiconductor integrated circuit device involves testing using a pushing mechanism that is constructed by forming, over the upper surface of a thin film probe, a reinforcing material having a linear expansion coefficient (thermal expansion coefficient) almost equal to that of a wafer to be tested; forming a groove in the reinforcing material above a contact terminal; placing an elastomer in the groove so that a predetermined amount projects out of the groove; and disposing a pusher and another elastomer to sandwich the pusher between the elastomers. With the use of such a probe, it is possible to improve the throughput of wafer-level electrical testing of a semiconductor integrated circuit.

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“Microrelay packaging technology using flip-chip assembly”; Miller, D.C.; Wenge Zhang; Bright, V.M.; Micro Electro Mechanical Systems, 2000. MEMS 2000. The Thirteenth Annual International Conference on Jan. 23-27, 2000; pp. 265-270.

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