Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-12-27
2005-12-27
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S692000, C438S693000, C438S697000, C438S699000
Reexamination Certificate
active
06979649
ABSTRACT:
A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.
REFERENCES:
patent: 5868857 (1999-02-01), Moinpour et al.
patent: 5874778 (1999-02-01), Bhattacharyya et al.
patent: 5901399 (1999-05-01), Moinpour et al.
patent: 5976267 (1999-11-01), Culkins et al.
patent: 6059889 (2000-05-01), Jensen et al.
patent: 6150696 (2000-11-01), Iwamatsu et al.
patent: 6159081 (2000-12-01), Hakomori
patent: 6232201 (2001-05-01), Yoshida et al.
patent: 6267649 (2001-07-01), Lai et al.
patent: 6309981 (2001-10-01), Mayer et al.
patent: 6334229 (2002-01-01), Moinpour et al.
patent: 6482749 (2002-11-01), Billington et al.
patent: 6509270 (2003-01-01), Held
patent: 6683007 (2004-01-01), Yamasaki et al.
patent: 2001/0024691 (2001-09-01), Kimura et al.
patent: 2002/0006876 (2002-01-01), Hongo et al.
patent: 1167583 (2002-01-01), None
patent: 1174912 (2002-01-01), None
Arai Toshiyuki
Kanai Fumiyuki
Kawai Ryousei
Nakabayashi Shinichi
Tsuchiyama Hirofumi
Antonelli, Terry Stout & Kraus, LLP.
Renesas Technology Corp.
Tran Binh X
LandOfFree
Fabrication method of semiconductor integrated circuit device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of semiconductor integrated circuit device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor integrated circuit device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3506354