Fabrication method of semiconductor integrated circuit device

Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means

Reexamination Certificate

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C438S692000, C438S693000, C438S697000, C438S699000

Reexamination Certificate

active

06979649

ABSTRACT:
A method of fabrication of a semiconductor integrated circuit device, including polishing the entire area of an edge of a wafer, for example, uses three polishing drums in which a polishing drum polishes the upper surface of the edge of the water, a polishing drum polishes the central portion of the edge of the wafer and a polishing drum polishes the lower surface of the edges of the wafer, thereby preventing occurrence of obstacles which cause defoliation of thin films on the edge of the wafer.

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