Fabrication method of semiconductor integrated circuit device

Details Fabrication method of semiconductor integrated circuit device Fabrication method of semiconductor integrated circuit device

2005-12-27

2005-12-27

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S639000, C438S691000

Reexamination Certificate

active

06979650

ABSTRACT:
In order to reduce micro scratches which tend to occur during chemical-mechanical polishing, a polishing slurry is diluted with deionized water immediately before it is supplied in a gap between a polishing pad and the surface of a wafer to be polished. By diluting the polishing slurry with deionized water to increase its volume, the concentration of coagulated particles contained in the polishing slurry can be lowered. For a mixture ratio of the polishing slurry and deionized water, about 1 (polishing slurry): 1–1.2 (deionized water) is used, and the concentration of silica contained in the diluted polishing slurry is adjusted to about 3–9 weight %, preferably about 4–8 weight %, and more preferably about 8 weight %.

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