Fabrication method of semiconductor device with trench isolation

Details Fabrication method of semiconductor device with trench isolation Fabrication method of semiconductor device with trench isolation

1994-12-22

1998-02-10

Fourson, George R.

Fishing, trapping, and vermin destroying

437 90, H01L 2176

Patent

active

057168687

ABSTRACT:
A method for forming a semiconductor device that can reduces the in size or height of a step generated near the mouth of a trench as compared with steps formed according to conventional methods. A semiconductor substrate is selectively removed to produce a trench therein. Next, the trench is filled with polysilicon. A top end of the polysilicon is lower than a surface of the substrate and a hollow space is produced at the top end of the trench. Then, a silicon filler is selectively formed on the top end of the polysilicon in the trench by crystal growth. A top end of the filler is substantially on the same level with the surface of the substrate. The top end of the filler is preferably higher than the surface of the substrate by -0.1 .mu.m to +0.2 .mu.m.

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