Fabrication method of semiconductor device using epitaxial growt

Details Fabrication method of semiconductor device using epitaxial growt Fabrication method of semiconductor device using epitaxial growt

1996-03-31

1998-03-03

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

438365, 438366, 438369, 438481, H01L 21331

Patent

active

057233780

ABSTRACT:
A fabrication method of a semiconductor device in which a single-crystal semiconductor layer can be epitaxially grown on an entire growth surface with less or no thickness fluctuation. A first insulating film is formed on a first single-crystal semiconductor layer of a first conductivity type. A first polycrystalline semiconductor film and a second insulating film are selectively formed on the first insulating film. The first insulating film is exposed through a first opening formed between the first polycrystalline semiconductor film and the second insulating film. The first insulating film is selectively removed using the first polycrystalline semiconductor film and the second insulating film as a mask, thereby forming a second opening greater in plan size than the first opening. A second single-crystal semiconductor layer of the second conductivity type is epitaxially grown on the first single-crystal semiconductor layer in the second opening. The thickness of the second single-crystal semiconductor layer is defined by the height of the second opening, i.e., the thickness of the first insulating film.

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