Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With a step of measuring – testing – or sensing
Reexamination Certificate
2006-06-06
2006-06-06
Kunemund, Robert (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With a step of measuring, testing, or sensing
C117S094000, C438S151000, C438S166000, C438S591000, C438S762000, C438S777000
Reexamination Certificate
active
07056381
ABSTRACT:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film106is formed in this step. At this time, the nickel element is gettered to the thermal oxide film106. Then, the thermal oxide film106is removed. Thereby, a crystal silicon film107having low concentration of the metal element and a high crystallinity can be obtained.
REFERENCES:
patent: 3389024 (1968-06-01), Schimmer
patent: 3783049 (1974-01-01), Sandera
patent: RE28385 (1975-04-01), Mayer
patent: RE28386 (1975-04-01), Heiman et al.
patent: 3890632 (1975-06-01), Ham et al.
patent: 4059461 (1977-11-01), Fan et al.
patent: 4068020 (1978-01-01), Reuschel
patent: 4132571 (1979-01-01), Cuomo et al.
patent: 4140548 (1979-02-01), Zimmer
patent: 4174217 (1979-11-01), Flatley
patent: 4226898 (1980-10-01), Ovahinsky et al.
patent: 4231809 (1980-11-01), Schmidt
patent: 4271422 (1981-06-01), Ipri
patent: 4277884 (1981-07-01), Hsu
patent: 4300989 (1981-11-01), Chang
patent: 4309224 (1982-01-01), Shibata
patent: 4330363 (1982-05-01), Biegesen et al.
patent: 4331709 (1982-05-01), Risch et al.
patent: 4379020 (1983-04-01), Glaeser et al.
patent: 4409724 (1983-10-01), Tasch, Jr. et al.
patent: 4466073 (1984-08-01), Boyan et al.
patent: 4472458 (1984-09-01), Sirinyan et al.
patent: 4481121 (1984-11-01), Barthel
patent: 4511800 (1985-04-01), Harbeke et al.
patent: 4534820 (1985-08-01), Mori et al.
patent: 4544418 (1985-10-01), Gibbons
patent: 4546376 (1985-10-01), Nakata et al.
patent: 4597160 (1986-07-01), Ipri
patent: 4634473 (1987-01-01), Swartz et al.
patent: 4735824 (1988-04-01), Yamabe et al.
patent: 4755481 (1988-07-01), Faraone
patent: 4759610 (1988-07-01), Yanagisawa
patent: 4911781 (1990-03-01), Fox et al.
patent: 4959247 (1990-09-01), Moser et al.
patent: 4959700 (1990-09-01), Yamazaki
patent: 4975760 (1990-12-01), Dohjo et al.
patent: 4996077 (1991-02-01), Moslehi et al.
patent: 4996523 (1991-02-01), Bell et al.
patent: 5043224 (1991-08-01), Jaccodine et al.
patent: 5075259 (1991-12-01), Moran
patent: 5089441 (1992-02-01), Moslehi
patent: 5112764 (1992-05-01), Mitra et al.
patent: 5132754 (1992-07-01), Serikawa et al.
patent: 5145808 (1992-09-01), Sameshima et al.
patent: 5147826 (1992-09-01), Liu et al.
patent: 5173446 (1992-12-01), Asakawa et al.
patent: 5200630 (1993-04-01), Nakamura et al.
patent: 5210050 (1993-05-01), Yamazaki et al.
patent: 5221423 (1993-06-01), Sugino et al.
patent: 5225355 (1993-07-01), Sugino et al.
patent: 5244836 (1993-09-01), Lim
patent: 5254480 (1993-10-01), Tran
patent: 5262350 (1993-11-01), Yamazaki et al.
patent: 5262654 (1993-11-01), Yamazaki
patent: 5275851 (1994-01-01), Fonash
patent: 5278093 (1994-01-01), Yonehara
patent: 5289030 (1994-02-01), Yamazaki
patent: 5296405 (1994-03-01), Yamazaki et al.
patent: 5298075 (1994-03-01), Lagendijk et al.
patent: 5300187 (1994-04-01), Lesk et al.
patent: 5306651 (1994-04-01), Masumo et al.
patent: 5308998 (1994-05-01), Yamazaki et al.
patent: 5313075 (1994-05-01), Zhang et al.
patent: 5313076 (1994-05-01), Yamazaki et al.
patent: 5352291 (1994-10-01), Zhang et al.
patent: 5354697 (1994-10-01), Oostra et al.
patent: 5358907 (1994-10-01), Wong
patent: 5365080 (1994-11-01), Yamazaki et al.
patent: 5366926 (1994-11-01), Mei et al.
patent: 5372860 (1994-12-01), Fehlner et al.
patent: 5387530 (1995-02-01), Doyle et al.
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5424230 (1995-06-01), Wakai
patent: 5426064 (1995-06-01), Zhang et al.
patent: 5470763 (1995-11-01), Hamada
patent: 5480811 (1996-01-01), Chiang et al.
patent: 5481121 (1996-01-01), Zhang et al.
patent: 5488000 (1996-01-01), Zhang et al.
patent: 5492843 (1996-02-01), Adachi et al.
patent: 5501989 (1996-03-01), Takayama et al.
patent: 5504019 (1996-04-01), Miyasaka et al.
patent: 5508207 (1996-04-01), Horai et al.
patent: 5508533 (1996-04-01), Takemura
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5530266 (1996-06-01), Yonehara et al.
patent: 5531182 (1996-07-01), Yonehara
patent: 5531862 (1996-07-01), Otsubo et al.
patent: 5534716 (1996-07-01), Takemura
patent: 5535471 (1996-07-01), Guldi
patent: 5543352 (1996-08-01), Ohtani et al.
patent: 5543636 (1996-08-01), Yamazaki
patent: 5550070 (1996-08-01), Funai et al.
patent: 5563426 (1996-10-01), Zhang et al.
patent: 5569610 (1996-10-01), Zhang et al.
patent: 5569936 (1996-10-01), Zhang et al.
patent: 5575883 (1996-11-01), Nishikawa
patent: 5580792 (1996-12-01), Zhang et al.
patent: 5580815 (1996-12-01), Hsu et al.
patent: 5585291 (1996-12-01), Ohtani et al.
patent: 5589694 (1996-12-01), Takayama et al.
patent: 5591988 (1997-01-01), Arai et al.
patent: 5595923 (1997-01-01), Zhang et al.
patent: 5595944 (1997-01-01), Zhang et al.
patent: 5604360 (1997-02-01), Zhang et al.
patent: 5605846 (1997-02-01), Ohtani et al.
patent: 5606179 (1997-02-01), Yamazaki et al.
patent: 5608232 (1997-03-01), Yamazaki et al.
patent: 5610737 (1997-03-01), Akiyama et al.
patent: 5612250 (1997-03-01), Ohtani et al.
patent: 5614426 (1997-03-01), Funada et al.
patent: 5614733 (1997-03-01), Zhang et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5619044 (1997-04-01), Makita et al.
patent: 5620910 (1997-04-01), Teramoto
patent: 5621224 (1997-04-01), Yamazaki et al.
patent: 5624851 (1997-04-01), Takayama et al.
patent: 5627086 (1997-05-01), Noguchi
patent: 5637515 (1997-06-01), Takemura
patent: 5639698 (1997-06-01), Yamazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5646424 (1997-07-01), Zhang et al.
patent: 5654203 (1997-08-01), Ohtani et al.
patent: 5656825 (1997-08-01), Kusumoto et al.
patent: 5661056 (1997-08-01), Takeuchi
patent: 5661311 (1997-08-01), Takemura et al.
patent: 5663077 (1997-09-01), Adachi et al.
patent: 5677549 (1997-10-01), Takayama et al.
patent: 5684317 (1997-11-01), Hwang
patent: 5684365 (1997-11-01), Tang et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5693541 (1997-12-01), Yamazaki et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5696003 (1997-12-01), Makita et al.
patent: 5696386 (1997-12-01), Yamazaki
patent: 5696388 (1997-12-01), Funada et al.
patent: 5700333 (1997-12-01), Yamazaki et al.
patent: 5704986 (1998-01-01), Chen et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5712191 (1998-01-01), Nakajima et al.
patent: 5717224 (1998-02-01), Zhang
patent: 5728259 (1998-03-01), Suzawa et al.
patent: 5734179 (1998-03-01), Chang et al.
patent: 5744822 (1998-04-01), Takayama et al.
patent: 5744824 (1998-04-01), Kousai et al.
patent: 5756364 (1998-05-01), Tanaka et al.
patent: 5763899 (1998-06-01), Yamazaki et al.
patent: 5766977 (1998-06-01), Yamazaki
patent: 5773327 (1998-06-01), Yamazaki et al.
patent: 5773846 (1998-06-01), Zhang et al.
patent: 5773847 (1998-06-01), Hayakawa
patent: 5782665 (1998-07-01), Weisfield et al.
patent: 5786796 (1998-07-01), Takayama et al.
patent: 5795795 (1998-08-01), Kousai et al.
patent: 5808321 (1998-09-01), Mitanaga et al.
patent: 5811327 (1998-09-01), Funai et al.
patent: 5818076 (1998-10-01), Zhang et al.
patent: 5821138 (1998-10-01), Yamazaki et al.
patent: 5821560 (1998-10-01), Arai et al.
patent: 5824574 (1998-10-01), Yamazaki et al.
patent: 5828429 (1998-10-01), Takemura
patent: 5838508 (1998-11-01), Sugawara
patent: 5843225 (1998-12-01), Takayama et al.
patent: 5846857 (1998-12-01), Ju
patent: 5849611 (1998-12-01), Yamazaki et al.
patent: 5869363 (1999-02-01), Yamazaki et al.
patent: 5882960 (1999-03-01), Zhang et al.
patent: 5888857 (1999-03-01), Zhang et al
patent: 5888858 (1999-03-01), Yamazaki et al.
patent: 5893730 (1999-04-01), Yamazaki et al.
patent: 5895933 (1999-04-01), Zhang et al.
patent: 5899547 (1999-05-01), Yamazaki et al.
patent: 5902993 (1999-05-01), Okushiba et al.
patent
Hayakawa Masahiko
Koyama Jun
Ogata Yasushi
Osame Mitsuaki
Teramoto Satoshi
Kunemund Robert
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Fabrication method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3696756