Fabrication method of semiconductor device

Details Fabrication method of semiconductor device Fabrication method of semiconductor device

2006-05-30

2006-05-30

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

C438S107000, C438S110000

Reexamination Certificate

active

07052934

ABSTRACT:
A fabrication method of a semiconductor device according to the present invention includes the steps of: bonding a reinforcing plate with a front surface of a semiconductor wafer via a reinforcing plate, the reinforcing plate having holes and the semiconductor wafer bearing semiconductor devices; grinding a back surface of the semiconductor wafer; and detaching the reinforcing plate from the semiconductor wafer by injecting a solvent for dissolving an adhesive layer into the holes and by allowing the solvent to permeate through the adhesive layer. The method enables the reinforcing plate to be quickly detached from the semiconductor wafer without causing defects, such as bending and cracking, in the semiconductor wafer after the reinforcing plate is used to grind the semiconductor wafer.

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Taiwanese Notice of Refusal and English translation thereof mailed Feb. 1, 2005 in corresponding Taiwanese application No. 093105391.

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