Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Reexamination Certificate
2007-01-16
2008-10-21
Vinh, Lan (Department: 1792)
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
C438S692000, C438S745000, C216S092000
Reexamination Certificate
active
07439190
ABSTRACT:
Provided is a fabrication method of a semiconductor device having an improved production yield.An insulating film for forming sidewall insulating films of a gate electrode is deposited on the main surface of a semiconductor wafer and then, subjected to the treatment for equalizing the film thickness distribution. In this treatment, the semiconductor wafer is fixed onto a spin stage of an etching apparatus and rotated; and an etchant is supplied from an etchant nozzle to the main surface of the rotating semiconductor wafer while moving thereabove the etchant nozzle from the peripheral side to the central side on the main surface of the semiconductor wafer. The moving speed of the etchant nozzle is controlled, depending on the thickness distribution of the insulating film and is made lower in a region where a change rate of the thickness of the insulating film in a radial direction of the semiconductor wafer is large than in a region where the change rate is small.
REFERENCES:
patent: 6096233 (2000-08-01), Taniyama et al.
patent: 6727155 (2004-04-01), Yang et al.
patent: 7271109 (2007-09-01), Konuma
patent: 2003/0109137 (2003-06-01), Iwamoto et al.
patent: 2005/0000940 (2005-01-01), Iwamoto et al.
patent: 2000-212773 (2000-08-01), None
patent: 2002-134466 (2002-05-01), None
patent: 2004-335923 (2004-11-01), None
patent: 2005-311012 (2005-11-01), None
Antonelli, Terry Stout & Kraus, LLP.
Renesas Technology Corp.
Vinh Lan
LandOfFree
Fabrication method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication method of semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4004302