Fabrication method of semiconductor device

Details Fabrication method of semiconductor device Fabrication method of semiconductor device

2006-06-05

2008-09-09

Kunemund, Robert M (Department: 1792)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from solid or gel state

C117S005000, C117S007000, C117S008000, C117S009000, C117S931000

Reexamination Certificate

active

07422630

ABSTRACT:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film103. Then, laser light is irradiated to diffuse the nickel element concentrated locally. After that, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film106is formed in this step. At this time, the nickel element is gettered to the thermal oxide film106. Then, the thermal oxide film106is removed. Thereby, a crystal silicon film107having low concentration of the metal element and a high crystallinity can be obtained.

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