Fabrication method of polycrystalline silicon TFT

Details Fabrication method of polycrystalline silicon TFT Fabrication method of polycrystalline silicon TFT

2007-08-21

2007-08-21

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Altering etchability of substrate region by compositional or...

C438S308000, C438S378000, C438S692000, C438S700000, C438S734000, C438S750000, C438S795000

Reexamination Certificate

active

10663805

ABSTRACT:
A method of fabricating polycrystalline silicon thin film transistor according to the present invention includes: depositing a buffer layer on a substrate; depositing an amorphous silicon layer on the buffer layer with a predetermined thickness; crystallizing the deposited amorphous silicon layer by using a laser to form a polycrystalline silicon layer; etching the crystallized polycrystalline silicon layer to a predetermined thickness; curing the etched polycrystalline silicon layer; and patterning the cured polycrystalline silicon layer to form a semiconductor layer.

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